Semiconductors: Tricky Questions Solved (5)

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Question

A silicon diode has a forward voltage drop of 0.7 V0.7\text{ V} at the operating current. It is connected in series with a resistor R=1 kΩR = 1\text{ k}\Omega and a battery of 5 V5\text{ V}. (a) Find the current in the circuit. (b) If the battery polarity is reversed, what is the current (assume reverse leakage of 1μA1\,\mu\text{A})? (c) What is the power dissipated in the diode in forward bias?

Solution — Step by Step

Apply Kirchhoff’s voltage law: battery voltage = drop across diode + drop across resistor.

5=0.7+IR5 = 0.7 + IR I=50.71000=4.31000=4.3 mAI = \frac{5 - 0.7}{1000} = \frac{4.3}{1000} = 4.3\text{ mA}

In reverse bias, the diode blocks almost all current. Only the tiny reverse saturation current flows. Given as 1μA1\,\mu\text{A}.

So Ireverse=1μAI_{\text{reverse}} = 1\,\mu\text{A}.

Power dissipated = voltage drop ×\times current.

Pdiode=VD×I=0.7×4.3×103=3.01 mWP_{\text{diode}} = V_D \times I = 0.7 \times 4.3\times 10^{-3} = 3.01\text{ mW}

Forward current =4.3 mA= 4.3\text{ mA}, reverse current =1μA= 1\,\mu\text{A}, Pdiode=3.01 mWP_{\text{diode}} = 3.01\text{ mW}.

Why This Works

In forward bias, the diode behaves like a small constant-voltage source (\sim0.7 V for Si, \sim0.3 V for Ge). The series resistor sets the current. The diode does not “know” the source voltage — it just maintains its drop.

In reverse bias, the depletion region widens and only thermal-generation carriers cross. This leakage current is roughly temperature-dependent and very small.

Alternative Method

Load-line approach: plot the diode’s II-VV characteristic and the line VD=VSIRV_D = V_S - IR. Their intersection gives the operating point. For Si at room temperature, this lands close to (0.7 V,4.3 mA)(0.7\text{ V}, 4.3\text{ mA}) — same answer, useful when the diode is non-ideal.

Common Mistake

Treating the diode as an ideal short circuit in forward bias (VD=0V_D = 0). Students then compute I=5/R=5 mAI = 5/R = 5\text{ mA}, which overshoots by \sim16%. The 0.7 V drop is the whole point of using Si over Ge — it provides better noise immunity and temperature stability.

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